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Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
DXG1CH25P-320EF 780P2 2435~2465 320 55.0 75.0 14.0 Released Product 雷火竞技官网:
DXG1CH08A-540EF* 780P2 758~821 540 49.0 58.0 18.0 Released Product
雷火竞技官网:DXG2CH22A-520EF* 780P2 2110~2170 510 49.0 58.2 14.8 Released Product 雷火竞技官网:
雷火竞技官网:DXG1CH27A-200EF* 780P2 2496~2690 220 45.0 50.0 14.1 Released Product 雷火竞技官网:
雷火竞技官网:DXG2CH27A-500EFV* 780P2 2500~2700 500 47.2 52.9 15.0 Released Product
雷火竞技官网:DXG1CH38A-200EF* 780P2 3300~3800 200 44.5 45.0 15.3 Released Product
DXG2CH38A-450EFV* 780P2 3300~3800 450 47.5 46.0 14.5 Released Product 雷火竞技官网:
DXG1CHD8A-F2EF* 780P2 3300~3800 450 48.5 42.0 14.0 Released Product 雷火竞技官网:
DXG2CH50A-200EF* 780P2 4800~5000 200 44.5 44.2 14.2 Released Product 雷火竞技官网:
雷火竞技官网:DOD1H0015-1800EF 1230P2 915 1800 61.5 79.0 18.0 Released Product 雷火竞技官网:
雷火竞技官网:DOD1H2425-600EF 1230P2 2435~2465 600 57.4 73.5 14.7 Released Product
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DXG2CH50A-450EF*

Brief description for the product

DXG2CH50A-450EF*
DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)52V
Psat (Typ.)56.6dBm
Power Gain @ 4900 MHz11.8dB
Efficiency @ 4900 MHz42.6%
ACPR @ 4900 MHz-34.0/-47.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CH25P-320EF

Brief description for the product

DXG1CH25P-320EF
DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)2400MHz
Frequency (Max.)2500MHz
Supply Voltage (Typ.)48V

Psat1 @ 2435 MHz

55.3dBm

Power Gain2 @ 2435 MHz

14.6dB

Efficiency2 @ 2435 MHz

73.6%


Note: Above Performance is the typical performance in Dynax's demo  with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.


DXG1CH08A-540EF*

Brief description for the product

DXG1CH08A-540EF*
DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)758MHz
Frequency (Max.)821MHz
Supply Voltage (Typ.)48V
Psat (Typ.)57.0dBm
Power Gain @ 780 MHz18.0dB
Efficiency @ 780 MHz58.0%
ACPR @ 780 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH22A-520EF*

Brief description for the product

DXG2CH22A-520EF*

DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications ;at frequencies from 2110 MHz to 2170 MHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2110MHz
Frequency (Max.)2170MHz
Supply Voltage (Typ.)48V
Psat (Typ.)57.1dBm
Power Gain @ 2140 MHz14.8dB
Efficiency @ 2140 MHz58.2%
ACPR @ 2140 MHz-34.6dBC


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CH27A-200EF*

Brief description for the product

DXG1CH27A-200EF*
DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.4dBm
Power Gain @ 2595 MHz14.1dB
Efficiency @ 2595 MHz50.0%
ACPR @ 2595 MHz-30.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH27A-500EFV*

Brief description for the product

DXG2CH27A-500EFV*
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)2500MHz
Frequency (Max.)2700MHz
Supply Voltage (Typ.)47V
56.7Psat (Typ.)56.7dBm
Power Gain @ 2593 MHz15.0dB
Efficiency @ 2593 MHz52.9%
ACPR @ 2593 MHz-32.9dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CH38A-200EF*

Brief description for the product

DXG1CH38A-200EF*
DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package. 


Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.0dBm
Power Gain @ 3500 MHz15.3dB
Efficiency @ 3500 MHz45.0%
ACPR @ 3500 MHz-30.0dBC
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH38A-450EFV*

Brief description for the product

DXG2CH38A-450EFV*
DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)50V
Psat (Typ.)56.7dBm
Power Gain @ 3500 MHz14.7dB
Efficiency @ 3500 MHz46%
ACPR @ 3500 MHz-34.2dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CHD8A-F2EF*

Brief description for the product

DXG1CHD8A-F2EF*
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)52V
Psat (Typ.) 56.5dBm
Power Gain @ 3400 MHz14.0dB
Efficiency @ 3400 MHz42.0%
ACPR @ 3400 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH50A-200EF*

Brief description for the product

DXG2CH50A-200EF*
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.2dBm
Power Gain @ 4900 MHz14.2dB
Efficiency @ 4900 MHz44.5%
ACPR @ 4900 MHz-28.5/-47dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DOD1H0015-1800EF

Brief description for the product

DOD1H0015-1800EF
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)DCMHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)50V
Psat (Typ.)61.5dBm
Power Gain @ 650 MHz18.0dB
Efficiency @ 650 MHz79.0%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.


DOD1H2425-600EF

Brief description for the product

DOD1H2425-600EF
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2400MHz
Frequency (Max.)2500MHz
Supply Voltage (Typ.)50V
Psat (Typ.)57.4dBm
Power Gain @ 2450 MHz14.7dB
Efficiency @ 2450 MHz73.5%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.