雷火竞技官网

产品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
雷火竞技官网:DXG1CH27A-200EF* 780P2 2496~2690 220 45.0 50.0 14.1 Released Product 雷火竞技官网:
DXG2CH27A-500EFV* 780P2 2500~2700 500 47.2 52.9 15.0 Released Product
雷火竞技官网:D2H210DE1 雷火竞技官网:
D2H185DE1 雷火竞技官网:
雷火竞技官网:DXG1CH38A-200EF* 780P2 3300~3800 200 44.5 45.0 15.3 Released Product
雷火竞技官网:D2H150DE1 雷火竞技官网:
雷火竞技官网:DXG2CH38A-450EFV* 780P2 3300~3800 450 47.5 46.0 14.5 Released Product 雷火竞技官网:
D2H135DE1
DXG1CHD8A-F2EF* 780P2 3300~3800 450 48.5 42.0 14.0 Released Product 雷火竞技官网:
雷火竞技官网:D2H120DE1 雷火竞技官网:
雷火竞技官网:DXG2CH50A-200EF* 780P2 4800~5000 200 44.5 44.2 14.2 Released Product
D2H095DE1
DOD1H0015-1800EF 1230P2 915 1800 61.5 79.0 18.0 Released Product 雷火竞技官网:
D2H065DE1
雷火竞技官网:D2H065DB1
雷火竞技官网:D2H055DB1
DOD1H2425-600EF 1230P2 2435~2465 600 57.4 73.5 14.7 Released Product 雷火竞技官网:
D2H046DA1
D2H042DB1
雷火竞技官网:D2H039DB1 雷火竞技官网:

DXG1CH27A-200EF*

Brief description for the product

DXG1CH27A-200EF*
DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.4dBm
Power Gain @ 2595 MHz14.1dB
Efficiency @ 2595 MHz50.0%
ACPR @ 2595 MHz-30.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH27A-500EFV*

Brief description for the product

DXG2CH27A-500EFV*
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)2500MHz
Frequency (Max.)2700MHz
Supply Voltage (Typ.)47V
56.7Psat (Typ.)56.7dBm
Power Gain @ 2593 MHz15.0dB
Efficiency @ 2593 MHz52.9%
ACPR @ 2593 MHz-32.9dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H210DE1

Brief description for the product

D2H210DE1
D2H210DE1就是一款氢氟酸处理硅（SiC）基氮化镓（GaN）高手机转至率纳米线管（HEMT），包括优质率、高增加收益、方便符合、光纤宽带宽等特征 ，是种种微波射频射频和微波射频选用的很好选泽。

Operating Characteristics

参数值单位
产品尺寸855*4860mm
应用电压48V
典型功率210W
效率
80%
增益20.5dB











有效应和增益控制完成指标为相应2.6GHz测试测试频点、最明显有效应点下的仿真模拟数据分析

仿真测试条件：VDD = 48 V, IDQ = 738 mA, 频率 = 2.6 GHz


D2H185DE1

Brief description for the product

D2H185DE1
D2H185DE1是一种款增碳硅（SiC）基氮化镓（GaN）高电子器材转化率多晶体管（HEMT），有极有工作效率率、高收获、方便适配、光纤宽带宽等优势特点，是各方面rf射频和微波加热APP的好决定。

Operating Characteristics

参数值单位
产品尺寸905*4125mm
应用电压48V
典型功率185W
效率
80%
增益20.0dB











工作转化率和增益控制质量指标为对照2.6GHz测量频点、最多工作转化率点下的仿真模拟数据统计

仿真测试条件：VDD = 48 V, IDQ = 655 mA, 频率 = 2.6 GHz


DXG1CH38A-200EF*

Brief description for the product

DXG1CH38A-200EF*
DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package. 


Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.0dBm
Power Gain @ 3500 MHz15.3dB
Efficiency @ 3500 MHz45.0%
ACPR @ 3500 MHz-30.0dBC
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H150DE1

Brief description for the product

D2H150DE1
D2H150DE1也是款氧化硅（SiC）基氮化镓（GaN）高手机移迁率氯化钠晶体管（HEMT），享有科学规范率、高增加收益、易切换、移动宽带宽等特色，是各种类型rf射频和微波通信应用领域的很理想挑选。

Operating Characteristics

参数值单位
产品尺寸795*3410mm
应用电压48V
典型功率150W
效率
80%
增益20.4dB











的高效率和收获标准为对应着2.6GHz检测频点、大的高效率点下的仿真技术数据信息

仿真测试条件：VDD = 48 V, IDQ = 504 mA, 频率 = 2.6 GHz


DXG2CH38A-450EFV*

Brief description for the product

DXG2CH38A-450EFV*
DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)50V
Psat (Typ.)56.7dBm
Power Gain @ 3500 MHz14.7dB
Efficiency @ 3500 MHz46%
ACPR @ 3500 MHz-34.2dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H135DE1

Brief description for the product

D2H135DE1
D2H135DE1都是款炭化硅（SiC）基氮化镓（GaN）高光电子迁址率晶状体管（HEMT），包括有成功率、高收获、易适合、宽带网宽等特征 ，是很多频射和红外光应运的理想的选用。

Operating Characteristics

参数值单位
产品尺寸975*4165mm
应用电压48V
典型功率135W
效率
80%
增益21.0dB











成功率和增益值技术指标为代表2.6GHz试验频点、最好成功率点下的模拟数值

仿真测试条件：VDD = 48 V, IDQ = 442 mA, 频率 = 2.6 GHz


DXG1CHD8A-F2EF*

Brief description for the product

DXG1CHD8A-F2EF*
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)52V
Psat (Typ.) 56.5dBm
Power Gain @ 3400 MHz14.0dB
Efficiency @ 3400 MHz42.0%
ACPR @ 3400 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H120DE1

Brief description for the product

D2H120DE1
D2H120DE1就是款炭化硅（SiC）基氮化镓（GaN）高电子器材转化率单晶体管（HEMT），具有着提高工作效率率、高增益值、有利筛选、网络带宽宽等性能，是繁多频射和微波射频采用的很理想首选。

Operating Characteristics

参数值单位
产品尺寸860*2710mm
应用电压48V
典型功率120W
效率
81%
增益20.8dB











速度和增益控制因素为对照2.6GHz检验频点、最明显速度点下的逼真数据库

仿真测试条件：VDD = 48 V, IDQ = 383 mA, 频率 = 2.6 GHz


DXG2CH50A-200EF*

Brief description for the product

DXG2CH50A-200EF*
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.2dBm
Power Gain @ 4900 MHz14.2dB
Efficiency @ 4900 MHz44.5%
ACPR @ 4900 MHz-28.5/-47dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H095DE1

Brief description for the product

D2H095DE1
D2H095DE1是一个款氢氟酸处理硅（SiC）基氮化镓（GaN）高光学移迁率多晶体管（HEMT），具备有优质率、高增加收益、非常易相配、光纤宽带宽等的特点，是不同频射和微波通信软件的理想的采用。

Operating Characteristics

参数值单位
产品尺寸785*2685mm
应用电压48V
典型功率95W
效率
81%
增益21.0dB











吸收率和增加收益评价指标为相匹配的2.6GHz测评频点、非常大吸收率点下的仿真模型数据信息

仿真测试条件：VDD = 48 V, IDQ = 297 mA, 频率 = 2.6 GHz


DOD1H0015-1800EF

Brief description for the product

DOD1H0015-1800EF
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)DCMHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)50V
Psat (Typ.)61.5dBm
Power Gain @ 650 MHz18.0dB
Efficiency @ 650 MHz79.0%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.


D2H065DE1

Brief description for the product

D2H065DE1
D2H065DE1就是一款无定形碳硅（SiC）基氮化镓（GaN）高电子无线迁徙率晶胞管（HEMT），兼有高率、高增加收益、非常容易配备、宽带网宽等特色，是各种类型微波通信射频和微波通信软件的很理想使用。

Operating Characteristics

参数值单位
产品尺寸880*2000mm
应用电压48V
典型功率65W
效率
82%
增益21.5dB











转化率和收获评价指标为相匹配2.6GHz测试仪频点、上限转化率点下的模型仿真数据报告

仿真测试条件：VDD = 48 V, IDQ = 189 mA, 频率 = 2.6 GHz


D2H065DB1

Brief description for the product

D2H065DB1
D2H065DB1是一个款无定形碳硅（SiC）基氮化镓（GaN）高电子元器件转化率多晶体管（HEMT），具高质量率、高增益控制、容易相配、网络带宽宽等作用，是各样频射和微波通信操作的良好会选择。

Operating Characteristics

参数值单位
产品尺寸845*1995mm
应用电压48V
典型功率65W
效率
82%
增益21.8dB











生产率和增益控制公式为代表2.6GHz测量频点、最主要生产率点下的仿真模拟数据分析

仿真测试条件：VDD = 48 V, IDQ = 193 mA, 频率 = 2.6 GHz


D2H055DB1

Brief description for the product

D2H055DB1
D2H055DB1就是款增碳硅（SiC）基氮化镓（GaN）高微电子转迁率氯化钠晶体管（HEMT），存在高质量率、高增益控制、非常容易相配、带宽宽等特殊性，是很多频射和微波加热应用领域的理想型选取。

Operating Characteristics

参数值单位
产品尺寸785*1755mm
应用电压48V
典型功率55W
效率
82%
增益22.0dB











使用率和增加收益指标图为相关联2.6GHz测试方法频点、最好使用率点下的仿真模型参数

仿真测试条件：VDD = 48 V, IDQ = 162 mA, 频率 = 2.6 GHz


DOD1H2425-600EF

Brief description for the product

DOD1H2425-600EF
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2400MHz
Frequency (Max.)2500MHz
Supply Voltage (Typ.)50V
Psat (Typ.)57.4dBm
Power Gain @ 2450 MHz14.7dB
Efficiency @ 2450 MHz73.5%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.


D2H046DA1

Brief description for the product

D2H046DA1
D2H046DA1都是款氢氟酸处理硅（SiC）基氮化镓（GaN）高電子挪动率氯化钠晶体管（HEMT），具备高效性率、高收获、有利配比、带宽宽等特质，是多种多样频射和微波加热利用的人生理想选择。

Operating Characteristics

参数值单位
产品尺寸880*1640mm
应用电压48V
典型功率46W
效率
82%
增益21.3dB











速率和增加收益要求为相对2.6GHz自测频点、最高速率点下的模拟仿真信息

仿真测试条件：VDD = 48 V, IDQ = 143 mA, 频率 = 2.6 GHz


D2H042DB1

Brief description for the product

D2H042DB1
D2H042DB1有的是款氧化硅（SiC）基氮化镓（GaN）高电商迁徙率氯化钠晶体管（HEMT），体现了极有工作效率率、高增加收益、可以符合、移动宽带宽等优势特点，是种种rf射频和微波射频运用的自然抉择。

Operating Characteristics

参数值单位
产品尺寸785*1515mm
应用电压48V
典型功率42W
效率
82%
增益22.7dB











高率和收获指标值为相关联2.6GHz测试软件频点、比较大高率点下的模型模拟数据表格

仿真测试条件：VDD = 48 V, IDQ = 126 mA, 频率 = 2.6 GHz


D2H039DB1

Brief description for the product

D2H039DB1
D2H039DB1就是一款氢氟酸处理硅（SiC）基氮化镓（GaN）高光学知识率尖晶石管（HEMT），还具有的效率高率、高增加收益、有利于识别、光纤宽带宽等性能，是一些频射和徽波应用软件的很好考虑。

Operating Characteristics

参数值单位
产品尺寸785*1395mm
应用电压48V
典型功率39W
效率
82%
增益22.7dB











转化率和增加收益指数为应对2.6GHz测评频点、最大的转化率点下的模型模拟数据文件

仿真测试条件：VDD = 48 V, IDQ = 116 mA, 频率 = 2.6 GHz