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DXG2CH27A-500EFV*

Brief description for the product

DXG2CH27A-500EFV*
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)2500MHz
Frequency (Max.)2700MHz
Supply Voltage (Typ.)47V
56.7Psat (Typ.)56.7dBm
Power Gain @ 2593 MHz15.0dB
Efficiency @ 2593 MHz52.9%
ACPR @ 2593 MHz-32.9dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.